|BSTJ : Impurity Redistribution and Junction Formation in Silicon by Thermal Oxidation (Atalla, M.M.; Tannenbaum, E.)|
Bell System Technical Journal, 39: 4 July 1960 pp 933-946. Impurity Redistribution and Junction Formation in Silicon by Thermal Oxidation (Atalla, M.M.; Tannenbaum, E.)
Keywords: impurity; diffusion; oxidation; silicon; junction; semiconductor; coefficient; impurities; segregation; film; segregation coefficient; film growth; thermal oxidation; surface concentration; diffusion coefficient; activation energy; junction depth; oxidation effects; bell system; system technical
|MIT6.774F04 - MIT OpenCourseWare|
This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new m...
Keywords: fabrication processes; silicon; integrated circuits; monolithic integrated circuits; physical models; bulk crystal growth; thermal oxidation; solid-state diffusion; ion implantation; epitaxial deposition; chemical vapor deposition; physical vapor deposition; refractory metal silicides; plasma and reactive ion etching; rapid thermal processing; process modeling; process simulation; technological limitations; integrated circuit design; integrated circuit fabrication; device operation; sige materials; processing